期刊
JOURNAL OF APPLIED PHYSICS
卷 108, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3518509
关键词
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资金
- Applied Materials(Registered)
- National Science Foundation
- U.S. DOE-BES Columbia University Energy Frontier Research Center
- U.S. DOE-BES Argonne-Northwestern Solar Energy Research (ANSER)
- Energy Frontier Research Center [DE-SC0001059]
- Link Energy Foundation
- NSF [DMR-0520513]
We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In, Ga)Se-2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V < similar to 0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (I-sh), across all three solar cell types considered, is characterized by the following common phenomenological features: (a) voltage symmetry about V = 0, (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from the measured data and discuss its implications on dark IV parameter extraction. We propose a space charge limited (SCL) current model for capturing all these features of the shunt leakage in a consistent framework and discuss possible physical origin of the parasitic paths responsible for this shunt current mechanism. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518509]
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