期刊
JOURNAL OF APPLIED PHYSICS
卷 108, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3466987
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资金
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DESC0001160]
- Dong-eui University Foundation
- John and Maureen Hendricks Fellowship
- Maryland Nano-Center
- NispLab
- FabLab
- MEST [R31-2008-000-10071-0]
- Ministry of Education, Science & Technology (MoST), Republic of Korea [R31-2008-000-10071-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Al-doped ZnO (AZO) films of similar to 100 nm thickness with various Al doping were prepared at 150 degrees C by atomic layer deposition on quartz substrates. At low Al doping, the films were strongly textured along the [100] direction, while at higher Al doping the films remained amorphous. Atomic force microscopy results showed that Al-O cycles when inserted in a ZnO film, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7 cm(2)/V s. Film resistivity reached a minima of 4.4 X 10(-3) Omega cm whereas the carrier concentration reached a maxima of 1.7 X 10(20) cm(-3), at 3 at. % Al. The band gap of AZO films varied from 3.23 eV for undoped ZnO films to 3.73 eV for AZO films with 24.6 at. % Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at. % is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein-Moss effect. (C) 2010 American Institute of Physics. [doi:10.1063/1.3466987]
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