期刊
JOURNAL OF APPLIED PHYSICS
卷 107, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3319667
关键词
diffraction gratings; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; laser modes; optical pumping; photonic crystals; quantum well lasers; rib waveguides; silicon-on-insulator; wide band gap semiconductors
资金
- ICT [COST MP0702]
- ANR
The integration of two-dimensional III-V InP-based photonic crystal and silicon wire waveguides is achieved through an accurate alignment of the two optical levels using mix-and-match deep ultraviolet (DUV)/electron beam lithography. The adhesively bonded structures exhibit an enhancement of light emission at frequencies where low group velocity modes of the photonic crystal line defect waveguides occur. Pulsed laser operation is obtained from these modes at room temperature under optical pumping. The laser light is coupled out of the Si waveguide via grating couplers directly to single mode fiber.
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