期刊
JOURNAL OF APPLIED PHYSICS
卷 107, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3407564
关键词
amplification; electronic structure; III-V semiconductors; indium compounds; piezoelectricity; quantum well lasers; valence bands; wide band gap semiconductors
资金
- National Science Foundation [0701421]
- U.S. Department of Energy [DE-FC26-08NT01581]
Staggered InGaN quantum wells (QWs) are analyzed as improved gain media for laser diodes (LDs) lasing at 440 and 500 nm. The calculation of band structure is based on a 6-band k center dot p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. Staggered InGaN QWs with two-layer and three-layer step-function like In-content InGaN QWs structures are investigated to enhance the optical gain as well as to reduce the threshold current density for LDs emitting at 440 and 500 nm. Our analysis shows that the optical gain is enhanced by 1.5-2.1 times by utilizing the staggered InGaN QW active region emitting at 440 nm, which leads to a reduction of the threshold current density up to 24% as compared to that of the conventional InGaN QW laser. Staggered InGaN QWs with enhanced optical gain shows significantly reduced blue-shift as carrier density increases, which enables nitride QWs with high optical gain in the green spectral regime. The use of green-emitting three-layer staggered InGaN QW is also expected to lead to reduction in the threshold carrier density by 30%. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3407564]
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