A comprehensive model for the ultrashort visible light irradiation of semiconductors

We present a new model describing the irradiation of semiconductors with ultrashort laser pulses. Based on the earlier developed multiple rate equation [Rethfeld, Phys. Rev. Lett. 92, 187401 (2004)], the model additionally includes the interaction of electrons with the phononic subsystem of the lattice and allows for the direct determination of the conditions for crystal damage. In contrast to commonly used approaches based on the thermodynamic description of the material, our model is applicable to nonequilibrium electronic conditions. Accounting for the dynamic changes in the optical properties of the target (i.e., reflectivity, photoabsorption coefficients), the developed model allows for a comprehensive evaluation of the damage by tracing the changes in the optical parameters, lattice heating and subsequent melting. Our model effectively describes the dynamics of the electronic subsystem and lattice heating and the results are in very good agreement with experimental measurements on the transient reflectivity and the fluence damage threshold of silicon irradiated with a femtosecond laser pulse. c 2010 American Institute of Physics. [doi:10.1063/1.3511455]