期刊
JOURNAL OF APPLIED PHYSICS
卷 107, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3267314
关键词
Curie temperature; electrical conductivity; electrical resistivity; ferromagnetic materials; gallium arsenide; gallium compounds; Hall effect; hole mobility; III-V semiconductors; indium compounds; magnetic semiconductors; manganese; metal-insulator transition; semiconductor doping; semiconductor quantum wells; Shubnikov-de Haas effect
资金
- Russian Foundation for Basic Research [09-02-00579, 08-02-00719, 09-02-12108, 09-02-12164, 09-07-00290]
The structural and transport properties of GaAs/Mn/GaAs/InxGa1-xAs/GaAs quantum wells (x approximate to 0.2) with Mn delta-layer (4-10 at. %), separated from the well by a GaAs spacer, have been studied. The hole mobility in the investigated structures has exceeded the values known for magnetic III-V heterostructures by two orders of magnitude. For structures with the conductivity of the metal type, we have succeeded to observe at low temperatures Shubnikov-de Haas oscillations just confirming the two dimensionality (2D) of the hole energy spectrum. Exactly those 2D holes promote the ferromagnetic ordering of the Mn layer. That has been proven by (i) observing maxima (at 25-40 K) in temperature dependencies of the resistance, which positions agree with calculated values of Curie temperatures (for structures with the indirect interaction of Mn atoms via 2D holes), and (ii) revealing the negative spin-dependent magnetoresistance (NMR) as well as the anomalous Hall effect (AHE), which values are also in good agreement with calculations relating to ferromagnetic 2D III-V systems. As for the structures with the insulator type of the conductivity, their NMR and AHE features evidence the phase separation-the sample fragmentation with the formation of mesoscopic ferromagnetic areas separated by paramagnetic strata of the high tunnel conductivity.
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