相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Anomalous temperature dependence of diode saturation currents in polycrystalline silicon thin-film solar cells on glass
J. Wong et al.
JOURNAL OF APPLIED PHYSICS (2009)
Electroluminescence from p-i-n structure fabricated using crystalline silicon on glass technology
T. Mchedlidze et al.
JOURNAL OF APPLIED PHYSICS (2009)
5% Efficient Evaporated Solid-phase Crystallised Polycrystalline Silicon Thin-film Solar Cells
O. Kunz et al.
PROGRESS IN PHOTOVOLTAICS (2009)
Solar Cell Efficiency Tables (Version 34)
Martin A. Green et al.
PROGRESS IN PHOTOVOLTAICS (2009)
Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients
Martin A. Green
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2008)
High open-circuit voltage values on fine-grained thin-film polysilicon solar cells
L. Carnel et al.
JOURNAL OF APPLIED PHYSICS (2006)
Progress with polycrystalline silicon thin-film solar cells on glass at UNSW
AG Aberle
JOURNAL OF CRYSTAL GROWTH (2006)
Experimental evidence of dislocation related shallow states in p-type Si -: art. no. 076401
A Castaldini et al.
PHYSICAL REVIEW LETTERS (2005)
Efficiency limitations of polycrystalline thin film solar cells:: case of Cu(In,Ga)Se2
JH Werner et al.
THIN SOLID FILMS (2005)
Analysis of recombination centers in epitaxial silicon thin-film solar cells by temperature-dependent quantum efficiency measurements
TA Wagner et al.
APPLIED PHYSICS LETTERS (2003)
Development of a three-dimensional numerical model of grain boundaries in highly doped polycrystalline silicon and applications to solar cells
PP Altermatt et al.
JOURNAL OF APPLIED PHYSICS (2002)
Recombination activity of contaminated dislocations in silicon:: A electron-beam-induced current contrast behavior -: art. no. 115208
V Kveder et al.
PHYSICAL REVIEW B (2001)
An analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices
S Reggiani et al.
VLSI DESIGN (2000)