期刊
JOURNAL OF APPLIED PHYSICS
卷 108, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3501052
关键词
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资金
- Siemens Seed Fund at U.C. Berkeley
- National Science Foundation (NSF) [EEC-0832819]
The spontaneous strain associated with the structural change in the metal-insulator transition in VO2 is orders of magnitude higher than thermal expansion mismatch used in bimetallic strips. Here we show that this strain can be leveraged to thermally activate bending of crystalline VO2-based bilayer microcantilevers at extremely large curvatures, making them suitable for thermal sensors, energy transducers and actuators with unprecedented sensitivities. The single-crystallinity, deposition conditions, and postdeposition treatments were utilized to control the metal-insulator domain structure along the cantilever, by which we achieved bending curvatures a few hundred times higher than conventional bilayer cantilevers with the same geometry. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3501052]
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