期刊
JOURNAL OF APPLIED PHYSICS
卷 107, 期 4, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3309018
关键词
atomic force microscopy; buckling; carrier mobility; CVD coatings; dislocations; field effect transistors; flexible electronics; galvanomagnetic effects; graphene; graphite; Raman spectra; scanning tunnelling microscopy; surface roughness; surface segregation; transmission electron microscopy; weak localisation
资金
- Miller Family Endowment
- Birck Director's Fund
- Midwest Institute for Nanoelectronics Discovery (MIND)
- Grodzins endowment
- American Chemical Society Petroleum Research Fund
- NSF [0620906, DMR-0084173]
- CAM Special Funding
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0847638] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [0620906] Funding Source: National Science Foundation
We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy, scanning tunneling microscopy, cross-sectional transmission electron microscopy (XTEM), and Raman spectroscopy confirm that such large-scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few-layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation similar to 50% and carrier mobilities reaching similar to 2000 cm(2)/V s. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 mu m from the observation of two-dimensional weak localization in low temperature magnetotransport measurements. Our results show that despite the nonuniformity and surface roughness, such large-scale, flexible thin films can have electronic properties promising for device applications.
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