期刊
JOURNAL OF APPLIED PHYSICS
卷 108, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3482026
关键词
atomic force microscopy; hardness; II-VI semiconductors; internal stresses; nanoindentation; radiation effects; Raman spectra; wide band gap semiconductors; zinc compounds
In this paper, the effect of ion irradiation on nanoscale hardness of ZnO microcones is reported. The hardness of ZnO cones determined by nanoindentation using atomic force microscope initially increases from 4.7 +/- 1.4 to 9.5 +/- 1.6 GPa after irradiation with 1.2 MeV Ar(+8) ions at an ion fluence of 10(15) ions cm(-2) and then decreases with increasing ion fluence. This change in mechanical hardness has been correlated with the residual stress of the sample revealed by Raman peak shift in the E(2)(H) mode. These results show that the generally reported radiation-hard nature of ZnO depends critically on irradiation conditions, especially the irradiation temperature. (c) 2010 American Institute of Physics. [doi:10.1063/1.3482026]
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