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注意:仅列出部分参考文献,下载原文获取全部文献信息。Dark current and band profiles in low defect density thick multilayered GaAs/InAs self-assembled quantum dot structures for infrared detectors
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Vas. P. Kunets et al.
JOURNAL OF APPLIED PHYSICS (2008)
Quantum-dot infrared photodetectors
Joe C. Campbell et al.
PROCEEDINGS OF THE IEEE (2007)
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J. F. Chen et al.
JOURNAL OF APPLIED PHYSICS (2007)
Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique
M. Kaniewska et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2007)
Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
K. Drozdowicz-Tomsia et al.
APPLIED PHYSICS LETTERS (2006)
Deep levels induced by InAs/GaAs quantum dots
M. Kaniewska et al.
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS (2006)
High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition
J Szafraniec et al.
APPLIED PHYSICS LETTERS (2006)
Electrical activity of deep levels in the presence of InAs/GaAs quantum dots
M. Kaniewska et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2006)
Coexistence of deep levels with optically active InAs quantum dots
SW Lin et al.
PHYSICAL REVIEW B (2005)
Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors
AD Stiff-Roberts et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2004)
Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots
O Engström et al.
APPLIED PHYSICS LETTERS (2003)
Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer
ET Kim et al.
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Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells
ET Kim et al.
APPLIED PHYSICS LETTERS (2001)
Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm
A Fiore et al.
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Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy
S Ghosh et al.
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