期刊
JOURNAL OF APPLIED PHYSICS
卷 108, 期 5, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3467780
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资金
- Deutsche Forschungsgemeinschaft [595]
- Academy of Finland
- German foreign exchange server (DAAD)
The intrinsic n-type doping limits of tin oxide (SnO2) and indium oxide (In2O3) are predicted on the basis of formation energies calculated by the density-functional theory using the hybrid-functional methodology. The results show that SnO2 allows for a higher n-type doping level than In2O3. While n-type doping is intrinsically limited by compensating acceptor defects in In2O3, the experimentally measured lower conductivities in SnO2-related materials are not a result of intrinsic limits. Our results suggest that by using appropriate dopants in SnO2 higher conductivities similar to In2O3 should be attainable. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3467780]
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