期刊
JOURNAL OF APPLIED PHYSICS
卷 107, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3271415
关键词
carrier density; energy gap; gallium; Hall mobility; III-V semiconductors; infrared spectra; pulsed laser deposition; semiconductor doping; semiconductor epitaxial layers; solid solubility; transparency; ultraviolet spectra; visible spectra; X-ray diffraction; zinc compounds
In this study, the optical and electrical properties of epitaxial single crystal gallium-doped MgxZn1-xO thin films grown on c-plane sapphire substrates by pulsed laser deposition were investigated. In these films, the Ga content was varied from 0.05 to 7 at. % and the Mg content was varied from 5 to 15 at. %. X-ray diffraction showed that the solid solubility limit of Ga in MgxZn1-xO is less than 3 at. %. The absorption spectra were fitted to examine Ga doping effects on bandgap and band tail characteristics. Distinctive trends in fitted bandgap and band tail characteristics were determined in films with Ga content below 3 at. % and Ga content above 3 at. %. The effects of bandgap engineering on optical transparency were evaluated using transmission spectra. Carrier concentration and Hall mobility data were obtained as functions of Ga content and Mg content. The electrical properties were significantly degraded when the Ga content exceeded 3 at. %. Correlations between conduction mechanisms and gallium doping of MgxZn1-xO thin films were described. In addition, the effect of bandgap engineering on the electrical properties of epitaxial single crystal gallium-doped MgxZn1-xO thin films was discussed.
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