期刊
JOURNAL OF APPLIED PHYSICS
卷 107, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3428466
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- NRI INDEX Center
We report that single-layer graphene on a SiO(2)/Si substrate withstands ion bombardment up to similar to 7 times longer than expected when exposed to focused Ga(+) ion beam. The exposure is performed in a dual beam scanning electron microscope/focused ion beam system at 30 kV accelerating voltage and 41 pA current. Ga(+) ion flux is determined by sputtering a known volume of hydrogenated amorphous carbon film deposited via plasma-enhanced chemical vapor deposition. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428466]
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