期刊
JOURNAL OF APPLIED PHYSICS
卷 107, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3291118
关键词
boron; carrier density; carrier mobility; diamond; dielectric losses; dielectric thin films; elemental semiconductors; grain boundaries; grain size; Hall effect; nanofabrication; nanostructured materials; semiconductor doping; semiconductor thin films
资金
- The U.K. Engineering and Physical Sciences Research Council (EPSRC) [EP/D029651]
- Office of Naval Research/Naval Research Laboratory
- Engineering and Physical Sciences Research Council [EP/D029651/1, EP/F026110/1, EP/H020055/1] Funding Source: researchfish
- EPSRC [EP/F026110/1, EP/H020055/1] Funding Source: UKRI
Nanocrystalline diamond (NCD) has been grown using a nanodiamond seeding technique, leading to a dense form of this material, with grain sizes around 100 nm. The electrical properties of both intrinsic and lightly boron-doped NCD have been investigated using impedance spectroscopy and Hall effect measurements. For intrinsic material, both grain boundaries and grains themselves initially contribute to the frequency dependant impedance values recorded. However, boundary conduction can be removed and the films become highly resistive. Interestingly, the ac properties of these films are also excellent with a dielectric loss value similar to 0.004 for frequencies up to 10 MHz. The dielectric properties of these NCD films are therefore as good as high quality large grain polycrystalline diamond films. In the case of boron-doped material, p-type material with good carrier mobility values (10-50 cm(2)/V s) can be produced at carrier concentrations around 10(17) cm(-3).
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