相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Removal of near-interface traps at SiO2/4H-SiC (0001) interfaces by phosphorus incorporation
Dai Okamoto et al.
APPLIED PHYSICS LETTERS (2010)
Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation
Vinayak Tilak et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC
John Rozen et al.
JOURNAL OF APPLIED PHYSICS (2009)
Ultrashallow defect states at SiO2/4H-SiC interfaces
S. Dhar et al.
APPLIED PHYSICS LETTERS (2008)
Transition layers at the SiO2/SiC interface
Tsvetanka Zheleva et al.
APPLIED PHYSICS LETTERS (2008)
The effect of gate oxide processes on the performance of 4H-SiC MOSFETs and gate-controlled diodes
Y. Wang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
The effects of implant activation anneal on the effective inversion layer mobility of 4H-SiC MOSFETs
Sarah Haney et al.
JOURNAL OF ELECTRONIC MATERIALS (2008)
Electron-scattering mechanisms in heavily doped silicon carbide MOSFET inversion layers
Vinayak Tilak et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs
F. Allerstam et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2007)
Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
A. Perez-Tomas et al.
JOURNAL OF APPLIED PHYSICS (2006)
Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor
Siddharth Potbhare et al.
JOURNAL OF APPLIED PHYSICS (2006)
4H-SiC oxynitridation for generation of insulating layers
GY Chung et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2004)
Kinetics of NO nitridation in SiO2/4H-SiC
K McDonald et al.
JOURNAL OF APPLIED PHYSICS (2003)
Physics-based numerical modeling and characterization of 6H-silicon-carbide metal-oxide-semiconductor field-effect transistors
SK Powell et al.
JOURNAL OF APPLIED PHYSICS (2002)
Effect of interface states on electron transport in 4H-SiC inversion layers
E Arnold et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)
Hall mobility and free electron density at the SiC/SiO2 interface in 4H-SiC
NS Saks et al.
APPLIED PHYSICS LETTERS (2000)
Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors
HF Li et al.
JOURNAL OF ELECTRONIC MATERIALS (2000)