期刊
JOURNAL OF APPLIED PHYSICS
卷 108, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3463414
关键词
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资金
- Joint French-Lithuanian research program Gilibert/EGIDE
- Lithuanian Research Council [MIP-85/2010]
- European Union [MTKD-CT-2005-029671]
GaAs nanometric field effect-transistors are used for room temperature single-pixel imaging using radiation frequencies above 1 THz. Images obtained in transmission mode at 1.63 THz are recorded using transistors operating in a photovoltaic mode with spatial resolution of 300 mu m and voltage sensitivity of about 8 mV/W. A reduction in response with increasing frequency was observed and mitigated by the application of a source-drain current, leading to the demonstration of imaging at up to 2.54 THz. (c) 2010 American Institute of Physics. [doi:10.1063/1.3463414]
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