4.6 Article

Validation of the transition state theory with Langevin-dynamics simulations

期刊

JOURNAL OF APPLIED PHYSICS
卷 108, 期 3, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3460639

关键词

conduction bands; copper compounds; gallium; II-VI semiconductors; p-n heterojunctions; pulsed laser deposition; semiconductor doping; semiconductor growth; semiconductor thin films; solar cells; sputter deposition; surface energy; valence bands; wide band gap semiconductors; X-ray photoelectron spectra; zinc compounds

资金

  1. FWF [P20306, F4112-N13]
  2. European Project TERAMAGSTOR [FP7-ITC-2007-2-224001]
  3. Austrian Science Fund (FWF) [P20306] Funding Source: Austrian Science Fund (FWF)

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Finite-element Langevin-dynamics simulations are performed in order to extract the attempt frequency of small magnetic particles as a function of an applied perpendicular field. The obtained values of the attempt frequency are in excellent agreement with the analytical results of [Kalmykov, J. Appl. Phys. 96, 1138 (2004)]. It is shown that an external field that is applied perpendicularly to the easy axis with a strength of just about 1% of the anisotropy field is strong enough that the framework of the transition state theory (TST) for broken symmetries can be applied. It is concluded that for most realistic structures, the attempt frequency can be numerically calculated by broken symmetry-TST formulism. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460639]

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