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Origin of the red luminescence in Mg-doped GaN
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Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy
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30-W/mm GaNHEMTs by field plate optimization
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Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques
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Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy
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Characteristics of semi-insulating, Fe-doped GaN substrates
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Characterization of Mg doped GaN by positron annihilation spectroscopy
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Interaction of hydrogen with gallium vacancies in wurtzite GaN
AF Wright
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Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
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Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
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Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy
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Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
SF Chichibu et al.
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