期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 10, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3129578
关键词
amorphous semiconductors; dangling bonds; doping; electron-hole recombination; elemental semiconductors; Fermi level; hydrogenation; interface states; passivation; silicon; solar cells
资金
- New Energy and Industrial Technology Development Organization (NEDO), Japan
- European Community's Seventh Framework Programme [FP/2007-2013]
- Hetsi Project [211821]
Doped hydrogenated amorphous silicon (a-Si:H) films of only a few nanometer thin find application in a-Si:H/crystalline silicon heterojunction solar cells. Although such films may yield a field effect at the interface, their electronic passivation properties are often found to be inferior, compared to those of their intrinsic counterparts. In this article, based on H-2 effusion experiments, the authors argue that this phenomenon is caused by Fermi energy dependent Si-H bond rupture in the a-Si:H films, for either type of doping. This results in the creation of Si dangling bonds, counteracting intentional doping of the a-Si:H matrix, and lowering the passivation quality.
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