期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3106642
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资金
- NREL [DE-AC36-08GO28308]
This work analyzes heterojunction with intrinsic thin layer (HIT) solar cells using numerical simulations. The differences between the device physics of cells with p- and n-type crystalline silicon (c-Si) wafers are substantial. HIT solar cells with n-type wafers essentially form a n/p/n structure, where tunneling across the junction heterointerfaces is a critical transport mechanism required to attain performance exceeding 20%. For HIT cells with p- type wafers, only tunneling at the back-contact barrier may be important. For p- wafer cells, the hydrogenated amorphous silicon (a-Si: H) between the indium tin oxide (ITO) and crystalline silicon may act as a passivating buffer layer but, otherwise, does not significantly contribute to device performance. For n-wafer cells, the carrier concentration and band alignment of this a-Si: H layer are critical to device performance. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3106642]
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