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注意:仅列出部分参考文献,下载原文获取全部文献信息。Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers
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Investigation of a distribution function suitable for acceptors in SiC
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Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers
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Electrical activation of high-concentration aluminum implanted in 4H-SiC
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Occupation probability for acceptor in Al-implanted p-type 4H-SiC
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Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum -: art. no. 165211
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Hole effective masses in 4H SiC
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