期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3126717
关键词
bismuth compounds; buffer layers; dielectric polarisation; electric domains; epitaxial layers; fatigue; ferroelectric thin films; hafnium; leakage currents; molecular beam epitaxial growth; pulsed laser deposition; reflection high energy electron diffraction; semiconductor-insulator boundaries; transmission electron microscopy; X-ray diffraction
资金
- Major State Basic Research Development Program of China [61363]
Hf-doped Bi4Ti3O12 (BTH) ferroelectric films with excellent electrical properties were epitaxially integrated with GaN semiconductor using (111) SrTiO3 (STO)/rutile (200) TiO2 as buffer layer. The STO/TiO2 buffer layer was deposited by laser molecular beam epitaxy. The structural characteristics of the buffer layer were in situ and ex situ characterized by reflective high energy electron diffraction, x-ray diffraction (XRD), and high resolution transmission microscopy. The overlaying SrRuO3 (SRO) and BTH films were then deposited by pulsed laser deposition. XRD spectra, including theta-2 theta and Phi scans, show that the (208) BTH films were epitaxially grown on GaN, and the BTH films inherit the in-plane twin-domain of STO buffer layer. Electrical measurements demonstrate that the non-c axis BTH films possess a large remnant polarization (2P(r)=45 mu C/cm(2)), excellent fatigue endurance (10.2% degradation after 1.1x10(10) switching cycles), and a low leakage current density (1.94x10(-7) A/cm(2) at an electric field of 200 kV/cm). These results reveal that the (208) BTH films with favorable electrical performance could be epitaxially grown on GaN template using STO/TiO2 buffer layer.
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