期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3106603
关键词
gallium compounds; high electron mobility transistors; numerical analysis; quantum well devices; semiconductor quantum wells; transient analysis
资金
- State Key Program for Basic Research of China [2006CB921507, 2007CB613206]
- National Natural Science Foundation of China [60576068, 60706012, 10734090, 10747162]
- Knowledge Innovation Program of the Chinese Academy of Sciences [C2-26]
- Applied Materials Shanghai Research and Development Fund [08520740600]
The intrinsic mechanisms of drain lag and current collapse in GaN-based high-electron-mobility transistors are studied by using two-dimensional numerical simulations. Simulated drain lag characteristics are in good agreement with reported experimental data. The dynamic pictures of trapping of hot electrons under drain-pulse voltages are discussed in detail. Hot-electron buffer-trapping effect plays an instrumental role in the current collapse mechanism. Polarization-induced interface charges have significant effect on the hot-electron buffer trapping and the current collapse can be weakened by increasing the interface charges. The trapped charges can accumulate at the drain-side gate edge, where the electric field significantly changes and gate-to-drain-voltage-dependent strain is induced, causing a notable current collapse. The simulation results show that the drain voltage range, beyond 5 V, is already in the field of the well-developed hot electron regime. The hot electrons can occupy a great number of traps at the drain-side gate edge leading to the current collapse at high drain bias (around 10 V), where the hot-electron trapping effect dominates. By considering quantum-well high-electron-mobility transistors, we find that better electron localization can reduce the current collapse.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据