The J-V characteristics and photovoltaic response of indium tin oxide/pentacene (d nm)/C-60 (40 nm)/BCP (10 nm) / Ag (100 nm) devices have been systematically analyzed. By fitting the J-V characteristics of the fabricated devices, photocurrent densities J(ph) were obtained. Meanwhile, we proposed a modified optical transfer matrix theory to satisfy the reasonable trend between P0R0 and film thickness of pentacene layers. Then, we revealed that an accurate rate of energy loss can be defined as E-loss = 1-beta J(e)/P0R0. Also, the relationship between open-circuit voltage V-OC, compensation voltage V-0 and initial polaron-pair bounding energy E-B was determined based on the detailed study and simulation of device photocurrent. (C) 2009 American Institute of Physics. [doi:10.1063/1.3223321]
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