4.6 Article

Al substituted Ba-hexaferrite single-crystal films for millimeter-wave devices

期刊

JOURNAL OF APPLIED PHYSICS
卷 105, 期 2, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3067759

关键词

aluminium; aluminium compounds; barium compounds; crystal growth from melt; ferromagnetic resonance; insulating thin films; magnetic anisotropy; millimetre wave devices; zone melting

资金

  1. Army Research Office [W911NF-08-10275]
  2. Office of Naval Research [N0001406-0167]
  3. Russian Federal Agency for Education [RNP/2.1.1.1382]

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Microwave and magnetic properties of single-crystal aluminum substituted barium hexaferrites BaAl(x)Fe(12-x)O(19) with Al substitution level x from 0 to 2 are reported. The single crystals were grown by the floating zone melting method. Films in the form of 100 mu m thick, 1 mm wide, and 2 mm long resonators were used for ferromagnetic resonance (FMR) measurements in the frequency domain over 40-110 GHz for applied magnetic fields of 0-10 kOe. Based on these measurements, the hexaferrite parameters are determined. With increasing x from 0 to 2, the uniaxial magnetocrystalline anisotropy field increases from 17.88 to 33.68 kOe, while reasonable values of full FMR linewidth (35 Oe at 47 GHz and 140 Oe at 108 GHz) are maintained. These parameters ensure the potential for use of the ferrites in millimeter-wave devices.

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