4.6 Article

Cubic Sc1-xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)

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JOURNAL OF APPLIED PHYSICS
卷 105, 期 11, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3132862

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  1. Swedish Foundation for Strategic Research (SSF) Center on Materials Science
  2. Swedish Research Council
  3. Swedish National Infrastructure for Computing (SNIC)
  4. Swedish National Supercomputer Centre (NSC)

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Reactive magnetron sputter epitaxy was used to deposit thin solid films of Sc1-xAlxN (0 <= x <= 1) onto MgO(111) substrates with ScN(111) seed layers. Stoichiometric films were deposited from elemental Sc and Al targets at substrate temperatures of 600 S C. The films were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, x-ray diffraction, and transmission electron microscopy. Results show that rocksalt structure (c)-Sc1-xAlxN solid solutions with AlN molar fractions up to similar to 60% can be synthesized. For higher AlN contents, the system phase separates into c- and wurtzite structure (w)-Sc1-xAlxN domains. The w-domains are present in three different orientations relative to the seed layer, namely, Sc1-xAlxN(0001)parallel to ScN(111) with Sc1-xAlxN[(1) over bar2 (1) over bar0]parallel to ScN[1 (1) over bar0], Sc1-xAlxN(10 (1) over bar1)parallel to ScN(111) with Sc1-xAlxN[(1) over bar2 (1) over bar0]parallel to ScN[1 (1) over bar0], and Sc1-xAlxN(10 (1) over bar1)parallel to ScN(113). The results are compared to first-principles density functional theory calculations for the mixing enthalpies of c-, w-, and zinc blende Sc0.50Al0.50N solid solutions, yielding metastability with respect to phase separation for all temperatures below the melting points of AlN and ScN. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3132862]

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