相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Current topics of silicon germanium devices
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Quantitative SIMS analysis of SiGe composition with low energy O2+ beams
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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
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Challenges of high Ge content silicon germanium structures
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Characterization of Ge gradients in SiGeHBTs by AES depth profile simulation
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Impact of the Ge concentration on the Ge-ionisation probability and the matrix sputter yield for a, SiGe matrix under oxygen irradiation
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Determination of the variation in sputter yield in the SIMS transient region using MEIS
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Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si1-xGex alloy layers
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Memory effect and redistribution of Mg into sequentially regrown GaN layer by metalorganic chemical vapor deposition
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2003)
Low energy plasma enhanced chemical vapor deposition
M Kummer et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2002)
SiGe - heterostructures for CMOS technology
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