期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3088872
关键词
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资金
- German Federation of Industrial Research Associations [FKZ 165 N]
- Federal Ministry of Education and Research (BMBF) [13N8751]
Silicon wafers were exposed to a dielectric barrier discharge (DBD) at atmospheric pressure, which was ignited by applying a high voltage (>12 kV peak voltage) to a small gap (d(g)=300 mu m) above the wafer surface in an oxygen process gas atmosphere. The effect of the DBD on H-terminated silicon and native silicon oxide surfaces was investigated in situ and ex situ by means of Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy (XPS). The influence of the treatment on surface roughness was studied by atomic force microscopy. In order to determine the thickness of the newly formed oxide under DBD influence, the method of calculating the oxide thickness from the Si 2p peak ratio in the XPS spectrum, which has so far been described for thermal oxides only, was adopted with x-ray reflectometry calibration samples. Additionally, infrared spectroscopy and spectroscopic ellipsometry were used to verify the XPS measurements. The calculated thickness values can be fitted with the growth law d=d(0) ln[(t /tau)+k], with d being the oxide thickness, grown during DBD exposure time t. Oxide thicknesses of more than 3 nm could be achieved within 350 s DBD exposure time. Our analysis of infrared spectra, XPS, and ellipsometry leads us to conclude that the newly formed oxide is porous with a pore fraction of roughly 10%. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3088872]
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