期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3100209
关键词
effusion; electric impedance; electroforming; iron; niobium; platinum; Schottky barriers; strontium compounds; switching
资金
- Intel Inc.
We succeeded in the separation of bulk and interface contributions to the electroforming and resistive switching behavior of Pt/STO(Fe)/Nb:STO devices by performing impedance spectroscopy. Two distinctive features observed in the impedance spectra could be assigned to the STO(Fe) bulk and to the depletion layer of the Pt/STO(Fe) Schottky contact. We attribute the resistance change during the dc forming process to a local bypassing of the depletion layer caused by oxygen effusion to the environment. By comparing the impedance spectra in the resistive on and off states, we propose that the resistance of the STO(Fe)/Nb:STO interface locally changes during the switching process.
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