期刊
JOURNAL OF APPLIED PHYSICS
卷 106, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3269724
关键词
gallium arsenide; gallium compounds; III-V semiconductors; magneto-optical effects; molecular beam epitaxial growth; nanowires; passivation; photoluminescence; Raman spectra; red shift; semiconductor quantum wires; transmission electron microscopy
资金
- FAPESP
- CNPq
- Natural Sciences and Engineering Research Council of Canada
- Ontario Centres of Excellence
- Canadian Institute for Photonic Innovations
The structural and optical properties of GaAsP/GaP core-shell nanowires grown by gas source molecular beam epitaxy were investigated by transmission electron microscopy, Raman spectroscopy, photoluminescence (PL), and magneto-PL. The effects of surface depletion and compositional variations in the ternary alloy manifested as a redshift in GaAsP PL upon surface passivation, and a decrease in redshift in PL in the presence of a magnetic field due to spatial confinement of carriers.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
