相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
O. Pakma et al.
JOURNAL OF APPLIED PHYSICS (2008)
Investigation of diode parameters using I-V and C-V characteristics of In/SiO2/p-Si (MIS) Schottky diodes
O. F. Yuksel et al.
PHYSICA B-CONDENSED MATTER (2008)
ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique
Ricky W. Chuang et al.
APPLIED PHYSICS LETTERS (2007)
Ultraviolet photodetection properties of a pt contact on a Mg0.1Zn0.9O/ZnO composite film
S. Mridha et al.
JOURNAL OF ELECTRONIC MATERIALS (2007)
ZnO thin films and light-emitting diodes
Dae-Kue Hwang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)
ZnO-based light-emitting metal-insulator-semiconductor diodes
Dae-Kue Hwang et al.
APPLIED PHYSICS LETTERS (2007)
High-temperature Schottky diode characteristics of bulk ZnO
Emre Gur et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2007)
Fairly pure ultraviolet electroluminescence from ZnO-based light-emitting devices
Peiliang Chen et al.
APPLIED PHYSICS LETTERS (2006)
Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition
Abhishek Motayed et al.
JOURNAL OF APPLIED PHYSICS (2006)
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu et al.
NATURE (2006)
Fabrication of a transparent p-n heterojunction thin film diode composed of p-CuAlO2/n-ZnO
Dae-Sung Kim et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2006)
Band-edge electroluminescence from N+-implanted bulk ZnO
HT Wang et al.
APPLIED PHYSICS LETTERS (2006)
Electrical characterization of p-type cubic boron nitride/n-type silicon heterojunction diodes
K Nose et al.
DIAMOND AND RELATED MATERIALS (2005)
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
A Tsukazaki et al.
NATURE MATERIALS (2005)
Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode
CX Wang et al.
APPLIED PHYSICS LETTERS (2004)
Electrical characteristics of AlxGa1-xN Schottky diodes prepared by a two-step surface treatment
A Motayed et al.
JOURNAL OF APPLIED PHYSICS (2004)
Structural and interface properties of an AlN diamond ultraviolet light emitting diode
CR Miskys et al.
APPLIED PHYSICS LETTERS (2004)
Band structure and fundamental optical transitions in wurtzite AlN
J Li et al.
APPLIED PHYSICS LETTERS (2003)
High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal
CX Wang et al.
APPLIED PHYSICS LETTERS (2003)
Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film
CX Wang et al.
DIAMOND AND RELATED MATERIALS (2003)
Experimental analysis and theoretical model for anomalously high ideality factors (n>>2.0) in AlGaN/GaN p-n junction diodes
JM Shah et al.
JOURNAL OF APPLIED PHYSICS (2003)
Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO
H Ohta et al.
APPLIED PHYSICS LETTERS (2003)
Epitaxy of cubic boron nitride on (001)-oriented diamond
XW Zhang et al.
NATURE MATERIALS (2003)
AlN/diamond heterojunction diodes
CR Miskys et al.
APPLIED PHYSICS LETTERS (2003)
Characterization of a diamond p-n junction using electron-beam-induced current and cathodoluminescence
T Sekiguchi et al.
APPLIED PHYSICS LETTERS (2002)
Advances in AlGaInN blue and ultraviolet light emitters
J Han et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2002)
分享论文
