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注意:仅列出部分参考文献,下载原文获取全部文献信息。Investigation of trap effects in AlGaN/GaN field-effect transistors by temperature dependent threshold voltage analysis
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Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy -: art. no. 023703
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