期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3086307
关键词
carrier mobility; electrodes; leakage currents; negative resistance; organic semiconductors; semiconductor device measurement; semiconductor thin films; solar cells
资金
- German Federal Ministry of Science and Education (BMBF FKZ) [13N8953, 13N8945]
Current-voltage analysis of single-carrier transport is a popular method for the determination of charge carrier mobilities in organic semiconductors. Although in widespread use for the analysis of hole transport, only a few reports can be found where the method was applied to electron transport. Here, we summarize the experimental difficulties related to the metal electrode leakage currents and nonlinear differential resistance (NDR) effects and explain their origin. We present a modified preparation technique for the metal electrodes and show that it significantly increases the reliability of such measurements. It allows to produce test devices with low leakage currents and without NDR even for thin organic layers. Metal oxides were often discussed as a possible cause of NDR. Our measurements on forcibly oxidized metal electrodes demonstrate that oxide layers are not exclusively responsible for NDR effects. We present electron transport data for two electron-conducting polymers often applied in all-polymer solar cells for a large variety of layer thicknesses and temperatures. The results can be explained by established exponential trapping models.
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