期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3116630
关键词
biosensors; electric admittance; electrostatics; elemental semiconductors; field effect transistors; gallium arsenide; III-V semiconductors; passivation; silicon
资金
- NIBIB NIH HHS [R21 EB006308] Funding Source: Medline
Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and an electrostatic model for FET-based biosensors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据