4.6 Article

Device considerations for development of conductance-based biosensors

期刊

JOURNAL OF APPLIED PHYSICS
卷 105, 期 10, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3116630

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biosensors; electric admittance; electrostatics; elemental semiconductors; field effect transistors; gallium arsenide; III-V semiconductors; passivation; silicon

资金

  1. NIBIB NIH HHS [R21 EB006308] Funding Source: Medline

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Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and an electrostatic model for FET-based biosensors.

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