期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3103281
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资金
- Air Force [FA8650-06-D-5401, F33615-03-D-5801]
We report on a study of the in-plane carrier mobility in InAs/GaSb superlattices as a function of carrier density. Instead of using a number of differently doped samples, we use the persistent-photoconductivity effect to vary the carrier density over a wide range from n- to p-type in single samples and perform Hall effect measurements. Hence, our data are not obscured by sample to sample nonuniformities. We demonstrate that low-temperature in-plane mobilities are limited by screened interface roughness scattering (IRS), although present models of two-dimensional carrier screening of IRS lead to a limited agreement with our data. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3103281]
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