期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3106104
关键词
annealing; cobalt; crystal microstructure; II-VI semiconductors; ion implantation; iron; manganese; nickel; precipitation; Raman spectra; segregation; X-ray diffraction; zinc compounds
资金
- Ministry of Science and Higher Education (Poland) [N515-015-32/0997]
- Degussa Stiftung
With micro-Raman spectroscopy and x-ray diffraction (XRD), we studied ZnO crystals implanted with Mn, Fe, Co, and Ni, respectively, with implantation concentrations from 4 up to 16 at. %. Using thermal treatments in air up to 700 degrees C, we analyzed the annealing effect on the ZnO crystal lattice as well as the onset of secondary phases and their microstructure on the sample surface. While the 500 degrees C treatment induces a considerable annealing, secondary phases are observed for transition metal (TM) concentrations >= 8 at. % after the treatment at 700 degrees C. Their microstructure strongly depends on the TM species. Various stoichiometric and nonstoichiometric TM oxide precipitates as well as elemental TM clusters are identified by their Raman and XRD signatures and their possible magnetic impact is discussed.
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