期刊
JOURNAL OF APPLIED PHYSICS
卷 106, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3159015
关键词
atomic force microscopy; gallium compounds; III-V semiconductors; light emitting diodes; point defects; screw dislocations; transmission electron microscopy; wide band gap semiconductors
资金
- Natural Science Foundation of China [60676032, 60406007, 60607003, 60577030]
- National Key Basic Research Special Foundation of China [TG 2007CB307004]
Microanalyses of the reverse-bias leakage current increase in the laser lift off (LLO) GaN-based light emitting diodes were performed. It was found that the amount of dislocations did not obviously change after LLO process in our experiments. The conductive-atomic force microscopy images and transmission electron microscope (TEM) images results revealed that almost all screw dislocations became to be related with leakage current and the current intensity increased over 100 times after the LLO process; however, only nanopipes corresponded to leakage current in the sample without the laser irradiation. Scanning TEM images indicated microstructure changes induced by LLO process. Amount of point defects around dislocations might be responsible for the increase in leakage current by providing more levels for tunneling.
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