期刊
JOURNAL OF APPLIED PHYSICS
卷 106, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3159654
关键词
carrier density; carrier mobility; diffusion; electronic density of states; hopping conduction; organic semiconductors
资金
- Austria Science Fund [P16862-N02]
- Austrian Science Fund (FWF) [P16862] Funding Source: Austrian Science Fund (FWF)
The ratio between mobility and diffusion parameters (Einstein relation) in organic semiconductors has been a debating issue in the recent years. In this paper we developed an analytical model based on hopping transport theory and the Gaussian density of states. The validity of Einstein relation in organic semiconductors is discussed. It is shown that the classic Einstein relation is invalid for organic semiconductors, even for the carrier concentration for experimental purpose.
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