期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3086658
关键词
decomposition; elemental semiconductors; impurity states; silicon; X-ray fluorescence analysis
资金
- Swiss National Science Foundation (SNSF) [PB FR2-118665]
We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10(12) atoms/cm(2). The latter can be presumably further improved down to 10(7) atoms/cm(2) by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed.
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