期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3093833
关键词
brittleness; carrier density; composite materials; electrical conductivity; elemental semiconductors; eutectic structure; fracture toughness; germanium; Ge-Si alloys; IV-VI semiconductors; lead compounds; melt processing; thermal conductivity; thermoelectricity
资金
- NSF-NSEC
- NSF-MRSEC
- Keck Foundation
- State of Illinois
- Northwestern University
We report the synthesis, microstructure, and transport properties of composite thermoelectric materials based on the eutectic phase relationship between PbTe and Ge. When quenched, these eutectic mixtures exhibit considerably stronger mechanical strength and reduced brittleness compared to PbTe itself, while at the same time they possess lower lattice thermal conductivity. Thermal conductivity measurements show values lower than expected based on the law of mixtures and multiphase composites. We find that the thermoelectric performance in these composites can be tuned through the use of hypereutectic compositions and alloying of Ge with Si. PbI2 was used as an n-type dopant, and precise control of the carrier concentration was achieved to optimize the electrical transport and thermoelectric properties. ZT values approaching 1.3 at 778 K have been obtained in samples of PbTe-Ge0.8Si0.2(5%), which represent an similar to 62% improvement over that of PbTe.
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