期刊
JOURNAL OF APPLIED PHYSICS
卷 106, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3197848
关键词
aluminium compounds; biexcitons; epitaxial growth; gallium arsenide; III-V semiconductors; semiconductor quantum dots
资金
- Italian PRIN MIUR [2006022932]
- MEXT, Japan
We report a detailed experimental investigation of the power dependence of excitonic complexes (neutral exciton, neutral biexciton, and charged exciton) confined in single self-assembled GaAs/AlGaAs strain-free quantum dots grown by droplet epitaxy. By using the random population theory we show that, under stationary excitation, the power dependence of the excitonic complexes precisely follows the Poissonian statistics. This result allows us to determine with great accuracy the state filling condition of the quantum dots (QDs) and therefore to estimate the capture volume of the QDs.
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