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Koji Kita et al.
APPLIED PHYSICS LETTERS (2009)
X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2/Si interface
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First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack
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Change in band alignment of HfO2 films with annealing treatments
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APPLIED PHYSICS LETTERS (2008)
Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS
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Effects of annealing on the valence band offsets between hafnium aluminate and silicon
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Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement
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Effects of aluminum incorporation on band alignment at the SiO2/HfO2 interface
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Study of la-induced flat band voltage shift in Metal/HfLaOx/SiO2/Si capacitors
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Density functional theory of high-k dielectric gate stacks
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Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3:: Atomically abrupt versus interlayer-containing interfaces -: art. no. 032104
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APPLIED PHYSICS LETTERS (2006)
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APPLIED PHYSICS LETTERS (2004)
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