期刊
JOURNAL OF APPLIED PHYSICS
卷 106, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3267853
关键词
amorphous semiconductors; crystallisation; deformation; doping profiles; elemental semiconductors; hydrogen; ion implantation; nanoindentation; Raman spectra; semiconductor doping; silicon; solid-state phase transformations; transmission electron microscopy
资金
- Australian Research Council
The effect of local hydrogen concentration on nanoindentation-induced phase transformations has been investigated in ion-implanted amorphous silicon (a-Si). Elevated concentrations of H ranging from 5x10(18) to 5x10(20) cm(-3), over the depth of indentation-induced phase transformed zones have been formed in the a-Si by H ion-implantation. Indentation has been performed under conditions that result in phase transformed zones composed totally of Si-III/Si-XII in the H-free samples. Deformation during indentation and determination of phase transformation behavior has been examined by analysis of load/unload curves, Raman microspectroscopy, and cross-sectional transmission electron microscopy (XTEM). With increasing H content, the probability of forming Si-III/Si-XII and the volume fraction of Si-III/Si-XII decrease. XTEM shows that these reduced volumes are randomly distributed within the phase transformed zone and are surrounded by indentation-induced a-Si. For a H concentration of 5x10(20) cm(-3), the probability of forming Si-III/Si-XII is reduced to 0.5 compared to 1 in H-free material and for those indents that exhibit the Si-III/Si-XII end phase the volume fraction is approximately 60 %. We suggest that the monohydride bonding configuration of Si and H in a-Si reduces the formation of the high pressure crystalline phases by retarding growth of the crystallites through a similar mechanism to that of hydrogen-retarded solid phase crystallization of a-Si to diamond cubic crystalline Si-I phase.
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