期刊
JOURNAL OF APPLIED PHYSICS
卷 106, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3253722
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资金
- National Research Foundation of Singapore [NRF-G-CRP 2007-01]
- National Natural Science Foundation of China (NSFC) [60806040]
Metal-insulator-metal (MIM) structure was fabricated by partially anodizing aluminum film followed by deposition of another aluminum film. Unipolar resistive switching between a high-resistance state and a low-resistance state with a high resistance ratio (> similar to 10(4)) was observed from the structure. The switching occurred without the requirement of a forming process, which was attributed to the pre-existing conductive filaments in the Al-rich Al(x)O(y) layer formed by the anodization Each resistance state exhibited Ohmic behavior which could be explained by the metallic conduction and electron hopping from one isolated state to the next in the Al-rich Al(x)O(y), layer. The MIM Structure showed good memory characteristics (C) 2009 American Institute Physics. [doi: 10.1063/1.3253722]
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