Resistive switching in aluminum/anodized aluminum film structure without forming process

Metal-insulator-metal (MIM) structure was fabricated by partially anodizing aluminum film followed by deposition of another aluminum film. Unipolar resistive switching between a high-resistance state and a low-resistance state with a high resistance ratio (> similar to 10(4)) was observed from the structure. The switching occurred without the requirement of a forming process, which was attributed to the pre-existing conductive filaments in the Al-rich Al(x)O(y) layer formed by the anodization Each resistance state exhibited Ohmic behavior which could be explained by the metallic conduction and electron hopping from one isolated state to the next in the Al-rich Al(x)O(y), layer. The MIM Structure showed good memory characteristics (C) 2009 American Institute Physics. [doi: 10.1063/1.3253722]