相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition
M. Halbwax et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Point defect engineered Si sub-bandgap light-emitting diode
Jiming Bao et al.
OPTICS EXPRESS (2007)
Influence of growth and annealing conditions on photoluminescence of Ge/Si layers grown on oxidized Si surfaces
A. A. Shklyaev et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2007)
Photoluminescence of Si layers grown on oxidized Si surfaces
A. A. Shklyaev et al.
JOURNAL OF APPLIED PHYSICS (2007)
Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes
Cheng Li et al.
JOURNAL OF APPLIED PHYSICS (2006)
Photoluminescence of Ge/Si structures grown on oxidized Si surfaces
AA Shklyaev et al.
APPLIED PHYSICS LETTERS (2006)
Silicon-based light emitters
M Kittler et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2006)
Erbium in silicon
AJ Kenyon
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2005)
Optical gain and stimulated emission in periodic nanopatterned crystalline silicon
SG Cloutier et al.
NATURE MATERIALS (2005)
Silicon light-emitting diodes based on dislocation-related luminescence
V Kveder et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2005)
Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration
E Leoni et al.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS (2004)
Will silicon be the photonic material of the third millenium?
L Pavesi
JOURNAL OF PHYSICS-CONDENSED MATTER (2003)
Very efficient light emission from bulk crystalline silicon
T Trupke et al.
APPLIED PHYSICS LETTERS (2003)
Effect of interfaces on quantum confinement in Ge dots grown on Si surfaces with a SiO2 coverage
AA Shklyaev et al.
SURFACE SCIENCE (2002)
An efficient room-temperature silicon-based light-emitting diode
WL Ng et al.
NATURE (2001)
Room temperature 1.6 μm electroluminescence from a Si-based light emitting diode with β-FeSi2 active region
T Suemasu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2000)
High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with a SiO2 coverage
AA Shklyaev et al.
PHYSICAL REVIEW B (2000)