4.6 Article

Misfit dislocation density and strain relaxation in graded semiconductor heterostructures with arbitrary composition profiles

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Electrical & Electronic

Overshoot graded layers for mismatched heteroepitaxial devices

J. F. Ocampo et al.

JOURNAL OF ELECTRONIC MATERIALS (2008)

Article Energy & Fuels

Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP

S. P. Ahrenkiel et al.

SOLAR ENERGY MATERIALS AND SOLAR CELLS (2007)

Article Physics, Applied

Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure

L. H. Wong et al.

APPLIED PHYSICS LETTERS (2007)