期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3053350
关键词
copper compounds; electrical resistivity; gas sensors; ion beam effects; semiconductor materials; semiconductor thin films; surface morphology
The studies are carried out on the effect of swift heavy ion (SHI) irradiation on surface morphology and electrical properties of copper sulfide (CuxS) thin films with three different chemical compositions (x values). The irradiation experiments have been carried out on CuxS films with x=1.4, 1.8, and 2 by 100 MeV gold heavy ions at room temperature. These as-deposited and irradiated thin films have been used to detect ammonia gas at room temperature (300 K). The SHI irradiation treatment on x=1.4 and 1.8 copper sulfide films enhances the sensitivity of the gas sensor. The results are discussed considering high electronic energy deposition by 100 MeV gold heavy ions in a matrix of copper sulfide.
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