期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3078104
关键词
charge injection; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric switching; ferroelectric thin films; lead compounds; platinum; thin film capacitors; zirconium compounds
资金
- Korean Government
This study examined the imprint mechanism of a ferroelectric Pt/Pb(Zr,Ti)O-3(150-nm-thick)/Pt capacitor using pulse switching transient current measurements. The progression of the imprint was well explained by the propagation of a localized charge injection area, where there was an increase in coercive voltage and interfacial capacitance over the entire capacitor area. The as-received samples exhibited uniform interfacial capacitance over the total area. Charge injection resulted in a more rectified remanent polarization-applied voltage relationship compared with the as-received sample. Analytic functional forms for the switching charge and local switching area were also derived.
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