相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Low write-current magnetic random access memory cell with anisotropy-varied free layers
S. Fukami et al.
JOURNAL OF APPLIED PHYSICS (2008)
Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell
H. Honjo et al.
JOURNAL OF APPLIED PHYSICS (2008)
Significant reduction of coercivity without reduction of tunneling magnetoresistance ratio of CoFeB/MgO/CoFeB-based magnetic tunnel junction using sandwich-structured free layer
Young-Suk Choi et al.
APPLIED PHYSICS LETTERS (2007)
MRAM cell technology for over 500-MHz SoC
Noboru Sakimura et al.
IEEE JOURNAL OF SOLID-STATE CIRCUITS (2007)
230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
DD Djayaprawira et al.
APPLIED PHYSICS LETTERS (2005)
Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling
DC Worledge et al.
APPLIED PHYSICS LETTERS (2003)
Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory
ND Rizzo et al.
APPLIED PHYSICS LETTERS (2002)